|
|
MOSFET SiC SIC_DISCRETE
- AIMW120R045M1XKSA1
- Infineon Technologies
-
1:
17.68 CHF
-
712A magazzino
-
NRND
|
Codice Mouser
726-AIMW120R045M1XKS
NRND
|
Infineon Technologies
|
MOSFET SiC SIC_DISCRETE
|
|
712A magazzino
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|
Min: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-3
|
1 Channel
|
1.2 kV
|
52 A
|
59 mOhms
|
- 7 V, + 20 V
|
5.7 V
|
57 nC
|
- 55 C
|
+ 175 C
|
228 W
|
Enhancement
|
CoolSiC
|
|
|
|
MOSFET SiC SILICON CARBIDE MOSFET
- IMW65R027M1HXKSA1
- Infineon Technologies
-
1:
11.77 CHF
-
1 701A magazzino
-
NRND
|
Codice Mouser
726-IMW65R027M1HXKSA
NRND
|
Infineon Technologies
|
MOSFET SiC SILICON CARBIDE MOSFET
|
|
1 701A magazzino
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|
Min: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-3
|
1 Channel
|
650 V
|
47 A
|
34 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
62 nC
|
- 55 C
|
+ 150 C
|
189 W
|
Enhancement
|
CoolSiC
|
|
|
|
MOSFET SiC SILICON CARBIDE MOSFET
- IMZA65R048M1HXKSA1
- Infineon Technologies
-
1:
8.38 CHF
-
299A magazzino
-
NRND
|
Codice Mouser
726-IMZA65R048M1HXKS
NRND
|
Infineon Technologies
|
MOSFET SiC SILICON CARBIDE MOSFET
|
|
299A magazzino
|
|
Min: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
650 V
|
39 A
|
64 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
33 nC
|
- 55 C
|
+ 150 C
|
125 W
|
Enhancement
|
CoolSiC
|
|
|
|
MOSFET SiC CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
- IMBF170R1K0M1XTMA1
- Infineon Technologies
-
1:
4.87 CHF
-
24 949In ordine
|
Codice Mouser
726-IMBF170R1K0M1XTM
|
Infineon Technologies
|
MOSFET SiC CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
|
|
24 949In ordine
In ordine:
1 949 07.01.2027 previsto
Tempo di consegna da parte della fabbrica:
53 settimane
|
|
Min: 1
Mult.: 1
:
1 000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.7 kV
|
5.2 A
|
1 Ohms
|
- 10 V, + 20 V
|
4.5 V
|
5 nC
|
- 55 C
|
+ 175 C
|
68 W
|
Enhancement
|
CoolSiC
|
|
|
|
MOSFET SiC CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
- IMZ120R030M1HXKSA1
- Infineon Technologies
-
1:
14.92 CHF
-
1 660In ordine
-
NRND
|
Codice Mouser
726-IMZ120R030M1HXKS
NRND
|
Infineon Technologies
|
MOSFET SiC CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
|
|
1 660In ordine
|
|
Min: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
1.2 kV
|
56 A
|
40 mOhms
|
- 7 V, + 23 V
|
5.7 V
|
63 nC
|
- 55 C
|
+ 150 C
|
227 W
|
Enhancement
|
CoolSiC
|
|
|
|
MOSFET SiC CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
- IMW120R140M1HXKSA1
- Infineon Technologies
-
1:
6.66 CHF
-
978In ordine
-
NRND
|
Codice Mouser
726-IMW120R140M1HXKS
NRND
|
Infineon Technologies
|
MOSFET SiC CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
|
|
978In ordine
In ordine:
18 05.11.2026 previsto
480 11.10.2027 previsto
Tempo di consegna da parte della fabbrica:
52 settimane
|
|
Min: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-3
|
1 Channel
|
1.2 kV
|
19 A
|
182 mOhms
|
- 7 V, + 23 V
|
3.5 V
|
13 nC
|
- 55 C
|
+ 175 C
|
94 W
|
Enhancement
|
CoolSiC
|
|
|
|
MOSFET SiC SILICON CARBIDE MOSFET
- IMZA65R072M1HXKSA1
- Infineon Technologies
-
1:
7.05 CHF
-
Tempo di consegna, se non a magazzino 52 settimane
-
NRND
|
Codice Mouser
726-IMZA65R072M1HXKS
NRND
|
Infineon Technologies
|
MOSFET SiC SILICON CARBIDE MOSFET
|
|
Tempo di consegna, se non a magazzino 52 settimane
|
|
Min: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
650 V
|
28 A
|
94 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
22 nC
|
- 55 C
|
+ 150 C
|
96 W
|
Enhancement
|
CoolSiC
|
|