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MOSFET SiC SIC_DISCRETE
- AIMW120R045M1XKSA1
- Infineon Technologies
-
1:
17.31 CHF
-
736A magazzino
-
NRND
|
Codice Mouser
726-AIMW120R045M1XKS
NRND
|
Infineon Technologies
|
MOSFET SiC SIC_DISCRETE
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|
736A magazzino
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17.31 CHF
|
|
|
12.88 CHF
|
|
|
12.77 CHF
|
|
Min: 1
Mult.: 1
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|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
52 A
|
59 mOhms
|
- 7 V, + 20 V
|
5.7 V
|
57 nC
|
- 55 C
|
+ 175 C
|
228 W
|
Enhancement
|
CoolSiC
|
|
|
|
MOSFET SiC CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
- IMBF170R1K0M1XTMA1
- Infineon Technologies
-
1:
4.23 CHF
-
6 780A magazzino
-
4 00007.01.2027 previsto
|
Codice Mouser
726-IMBF170R1K0M1XTM
|
Infineon Technologies
|
MOSFET SiC CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
|
|
6 780A magazzino
4 00007.01.2027 previsto
|
|
|
4.23 CHF
|
|
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2.81 CHF
|
|
|
2.01 CHF
|
|
|
1.78 CHF
|
|
|
1.66 CHF
|
|
Min: 1
Mult.: 1
:
1 000
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|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.7 kV
|
5.2 A
|
1 Ohms
|
- 10 V, + 20 V
|
4.5 V
|
5 nC
|
- 55 C
|
+ 175 C
|
68 W
|
Enhancement
|
CoolSiC
|
|
|
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MOSFET SiC CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
- IMW120R140M1HXKSA1
- Infineon Technologies
-
1:
5.84 CHF
-
285A magazzino
-
NRND
|
Codice Mouser
726-IMW120R140M1HXKS
NRND
|
Infineon Technologies
|
MOSFET SiC CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
|
|
285A magazzino
|
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|
5.84 CHF
|
|
|
3.71 CHF
|
|
|
3.11 CHF
|
|
|
2.88 CHF
|
|
Min: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
19 A
|
182 mOhms
|
- 7 V, + 23 V
|
3.5 V
|
13 nC
|
- 55 C
|
+ 175 C
|
94 W
|
Enhancement
|
CoolSiC
|
|
|
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MOSFET SiC SILICON CARBIDE MOSFET
- IMW65R027M1HXKSA1
- Infineon Technologies
-
1:
11.99 CHF
-
1 221A magazzino
-
NRND
|
Codice Mouser
726-IMW65R027M1HXKSA
NRND
|
Infineon Technologies
|
MOSFET SiC SILICON CARBIDE MOSFET
|
|
1 221A magazzino
|
|
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11.99 CHF
|
|
|
7.54 CHF
|
|
|
6.80 CHF
|
|
Min: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
47 A
|
34 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
62 nC
|
- 55 C
|
+ 150 C
|
189 W
|
Enhancement
|
CoolSiC
|
|
|
|
MOSFET SiC SILICON CARBIDE MOSFET
- IMZA65R048M1HXKSA1
- Infineon Technologies
-
1:
8.72 CHF
-
42A magazzino
-
24024.08.2026 previsto
-
NRND
|
Codice Mouser
726-IMZA65R048M1HXKS
NRND
|
Infineon Technologies
|
MOSFET SiC SILICON CARBIDE MOSFET
|
|
42A magazzino
24024.08.2026 previsto
|
|
|
8.72 CHF
|
|
|
5.49 CHF
|
|
|
4.88 CHF
|
|
|
4.44 CHF
|
|
Min: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
39 A
|
64 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
33 nC
|
- 55 C
|
+ 150 C
|
125 W
|
Enhancement
|
CoolSiC
|
|
|
|
MOSFET SiC CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
- IMZ120R030M1HXKSA1
- Infineon Technologies
-
1:
12.75 CHF
-
2 160In ordine
-
NRND
|
Codice Mouser
726-IMZ120R030M1HXKS
NRND
|
Infineon Technologies
|
MOSFET SiC CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
|
|
2 160In ordine
Tempo di consegna da parte della fabbrica:
52 settimane
|
|
|
12.75 CHF
|
|
|
8.27 CHF
|
|
|
7.58 CHF
|
|
Min: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
56 A
|
40 mOhms
|
- 7 V, + 23 V
|
5.7 V
|
63 nC
|
- 55 C
|
+ 150 C
|
227 W
|
Enhancement
|
CoolSiC
|
|
|
|
MOSFET SiC SILICON CARBIDE MOSFET
- IMZA65R072M1HXKSA1
- Infineon Technologies
-
1:
7.21 CHF
-
Tempo di consegna, se non a magazzino 52 settimane
-
NRND
|
Codice Mouser
726-IMZA65R072M1HXKS
NRND
|
Infineon Technologies
|
MOSFET SiC SILICON CARBIDE MOSFET
|
|
Tempo di consegna, se non a magazzino 52 settimane
|
|
|
7.21 CHF
|
|
|
4.21 CHF
|
|
|
3.55 CHF
|
|
|
3.37 CHF
|
|
Min: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
28 A
|
94 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
22 nC
|
- 55 C
|
+ 150 C
|
96 W
|
Enhancement
|
CoolSiC
|
|
Svizzera