π-MOS VIII MOSFETs

Toshiba π-MOS VIII MOSFETs are 10V gate drive single N-channel devices based on the Toshiba eighth-generation planar semiconductor process, which combines high levels of cell integration with optimized cell design. The technology supports reduced gate charge and capacitance compared to prior generations without losing the benefits of low RDS(ON). Available with 800V and 900V ratings, these MOSFETs target applications such as flyback converters in LED lighting, supplementary power supplies, and other circuits that require current switching below 5.0A. These devices are offered in a standard TO-220 through-hole form factor and a surface-mounted DPAK package.

Ergebnisse: 11
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Menge RoHS ECAD Model Technologie
Montageart
Verpackung/Gehäuse
Transistorpolung
Anzahl der Kanäle
Vds - Drain-Source-Durchschlagspannung
Id - Drain-Gleichstrom
Rds On - Drain-Source-Widerstand
Vgs - Gate-Source-Spannung
Vgs th - Gate-Source-Schwellspannung
Qg - Gate-Ladung
Minimale Betriebstemperatur
Maximale Betriebstemperatur
Pd - Verlustleistung
Kanalmodus
Handelsname
Verpackung
Toshiba MOSFETs TO252 900V 2A N-CH MOSFET
Datenblatt
4 015Auf Lager
Cut-Tape
1.45 CHF
0.758 CHF
0.588 CHF
0.462 CHF
Reel
0.429 CHF
Anzeigen
MouseReel verfügbar
Min.: 1
Mult.: 1
: 2 000
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 900 V 2 A 5.9 Ohms 30 V 2.5 V 12 nC - 55 C + 150 C 80 W Enhancement MOSVIII Reel, Cut Tape, MouseReel
Toshiba MOSFETs X33 Pb-F POWER MOSFET TRANSISTOR DPAK(OS) MOQ=2000 PD=80W F=1MHZ
Datenblatt
3 095Auf Lager
Cut-Tape
1.24 CHF
0.579 CHF
0.516 CHF
0.404 CHF
Reel
0.388 CHF
Anzeigen
MouseReel verfügbar
Min.: 1
Mult.: 1
: 2 000
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 3 A 4.9 Ohms 30 V 2.5 V 12 nC - 55 C + 150 C 80 W Enhancement MOSVIII Reel, Cut Tape, MouseReel
Toshiba MOSFETs PLN MOS 900V 1300m (VGS=10V) TO-220SIS
Datenblatt
1Auf Lager
550Auf Bestellung
2.58 CHF
1.26 CHF
1.12 CHF
0.955 CHF
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 900 V 9 A 1 Ohms 30 V 4 V 46 nC - 55 C + 150 C 50 W Enhancement MOSVIII Tube
Toshiba MOSFETs PLN MOS 900V 1300m (VGS=10V) TO-3PN
Datenblatt
2 396Auf Lager
3.15 CHF
1.80 CHF
1.42 CHF
1.30 CHF
0.955 CHF
Min.: 1
Mult.: 1
Si Through Hole TO-3P N-Channel 1 Channel 900 V 9 A 1.3 Ohms 30 V 2.5 V 46 nC - 55 C + 150 C 250 W Enhancement MOSVIII Tray
Toshiba MOSFETs PLN MOS 800V 1000m (VGS=10V) TO-220SIS
Datenblatt
153Auf Lager
2.28 CHF
1.12 CHF
1.05 CHF
Min.: 1
Mult.: 1
Si Through Hole TO-220FP-3 N-Channel 1 Channel 800 V 10 A 700 mOhms 30 V 4 V 46 nC - 55 C + 150 C 50 W Enhancement MOSVIII Tube
Toshiba MOSFETs PLN MOS 800V 1000m (VGS=10V) TO-3PN
Datenblatt
4Auf Lager
125erwartet ab 16.11.2026
3.09 CHF
1.58 CHF
1.40 CHF
1.15 CHF
Anzeigen
Min.: 1
Mult.: 1
Si Through Hole TO-3PN-3 N-Channel 1 Channel 800 V 10 A 700 mOhms 30 V 4 V 46 nC - 55 C + 150 C 250 W Enhancement MOSVIII Tray
Toshiba MOSFETs X33 Pb-F POWER MOSFET TRANSISTOR TO-220SIS PD=35W F=1MHZ
Datenblatt
250Auf Lager
1.29 CHF
0.612 CHF
0.611 CHF
0.478 CHF
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 900 V 2.5 A 4.6 Ohms 30 V 2.5 V 15 nC - 55 C + 150 C 35 W Enhancement MOSVIII Tube
Toshiba MOSFETs X33 Pb-F POWER MOSFET TRANSISTOR TO-220SIS PD=35W F=1MHZ
Datenblatt
265Auf Lager
1.32 CHF
0.622 CHF
0.478 CHF
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 4 A 3.5 Ohms 30 V 2.5 V 15 nC - 55 C + 150 C 35 W Enhancement MOSVIII Tube
Toshiba MOSFETs PLN MOS 800V 1700m (VGS=10V) TO-220SIS
Datenblatt
158Auf Lager
1.90 CHF
0.926 CHF
0.917 CHF
0.805 CHF
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 6 A 1.35 Ohms 30 V 4 V 32 nC - 55 C + 150 C 45 W Enhancement MOSVIII Tube
Toshiba MOSFETs PLN MOS 900V 2000m (VGS=10V) TO-220SIS
Datenblatt
170Auf Lager
1.77 CHF
0.861 CHF
0.854 CHF
0.737 CHF
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 900 V 7 A 1.6 Ohms 30 V 4 V 32 nC - 55 C + 150 C 45 W Enhancement MOSVIII Tube
Toshiba MOSFETs PLN MOS 900V 2000m (VGS=10V) TO-3PN
Datenblatt
98Auf Lager
2.69 CHF
1.35 CHF
1.19 CHF
0.973 CHF
Anzeigen
Min.: 1
Mult.: 1
Si Through Hole TO-3PN-3 N-Channel 1 Channel 900 V 7 A 1.6 Ohms 30 V 4 V 32 nC - 55 C + 150 C 200 W Enhancement MOSVIII Tray