|
|
MOSFETs POWER MOSFET N-CH 500V 13A
- STW19NM50N
- STMicroelectronics
-
1:
CHF 5.80
-
428Auf Lager
|
Mouser-Teilenr.
511-STW19NM50N
|
STMicroelectronics
|
MOSFETs POWER MOSFET N-CH 500V 13A
|
|
428Auf Lager
|
|
|
CHF 5.80
|
|
|
CHF 3.33
|
|
|
CHF 2.80
|
|
|
CHF 2.74
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
|
|
|
MOSFETs N-Ch 600V 0.63 6.5A MDmesh II Power MO
- STD9NM60N
- STMicroelectronics
-
1:
CHF 2.59
-
2 341Auf Lager
|
Mouser-Teilenr.
511-STD9NM60N
|
STMicroelectronics
|
MOSFETs N-Ch 600V 0.63 6.5A MDmesh II Power MO
|
|
2 341Auf Lager
|
|
|
CHF 2.59
|
|
|
CHF 1.32
|
|
|
CHF 1.02
|
|
|
CHF 0.907
|
|
|
CHF 0.907
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
|
|
|
MOSFET-Module ACEPACK 2 power module, 3-level topology, 1200 V, 13 mOhm typ. SiC Power MOSFET
- A2U12M12W2-F2
- STMicroelectronics
-
1:
CHF 173.60
-
41Auf Lager
-
NRND
|
Mouser-Teilenr.
511-A2U12M12W2-F2
NRND
|
STMicroelectronics
|
MOSFET-Module ACEPACK 2 power module, 3-level topology, 1200 V, 13 mOhm typ. SiC Power MOSFET
|
|
41Auf Lager
|
|
Min.: 1
Mult.: 1
|
|
MOSFET Modules
|
SiC
|
Press Fit
|
|
|
|
|
|
MOSFETs N-Ch 600V 0.160 Ohm 19A HV Mdmesh II
- STL26NM60N
- STMicroelectronics
-
1:
CHF 4.07
-
2 119Auf Lager
|
Mouser-Teilenr.
511-STL26NM60N
|
STMicroelectronics
|
MOSFETs N-Ch 600V 0.160 Ohm 19A HV Mdmesh II
|
|
2 119Auf Lager
|
|
|
CHF 4.07
|
|
|
CHF 3.26
|
|
|
CHF 2.36
|
|
|
CHF 2.34
|
|
|
CHF 2.07
|
|
|
CHF 2.07
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
PowerFLAT-8x8-HV-5
|
N-Channel
|
|
|
|
IGBT-Module ACEPACK 2 converter inverter brake, 1200 V, 25 A trench gate field-stop IGBT M s
- A2C25S12M3
- STMicroelectronics
-
1:
CHF 47.49
-
33Auf Lager
|
Mouser-Teilenr.
511-A2C25S12M3
|
STMicroelectronics
|
IGBT-Module ACEPACK 2 converter inverter brake, 1200 V, 25 A trench gate field-stop IGBT M s
|
|
33Auf Lager
|
|
Min.: 1
Mult.: 1
|
|
IGBT Modules
|
Si
|
Through Hole
|
ACEPACK2
|
|
|
|
|
MOSFETs N-channel 600 V 0.190 ohm 16A Mdmesh
- STB22NM60N
- STMicroelectronics
-
1:
CHF 3.86
-
1 030Auf Lager
-
Status beim Hersteller bestätigen
|
Mouser-Teilenr.
511-STB22NM60N
Status beim Hersteller bestätigen
|
STMicroelectronics
|
MOSFETs N-channel 600 V 0.190 ohm 16A Mdmesh
|
|
1 030Auf Lager
|
|
|
CHF 3.86
|
|
|
CHF 3.11
|
|
|
CHF 2.80
|
|
|
CHF 2.62
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
|
|
|
MOSFETs N-Ch 650 Volt 5 Amp
- STB8NM60T4
- STMicroelectronics
-
1:
CHF 3.45
-
919Auf Lager
|
Mouser-Teilenr.
511-STB8NM60
|
STMicroelectronics
|
MOSFETs N-Ch 650 Volt 5 Amp
|
|
919Auf Lager
|
|
|
CHF 3.45
|
|
|
CHF 1.64
|
|
|
CHF 1.36
|
|
|
CHF 1.35
|
|
|
CHF 1.35
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
|
|
|
MOSFETs N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in TO-220FP package
- STF16N65M2
- STMicroelectronics
-
1:
CHF 2.11
-
926Auf Lager
|
Mouser-Teilenr.
511-STF16N65M2
|
STMicroelectronics
|
MOSFETs N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in TO-220FP package
|
|
926Auf Lager
|
|
|
CHF 2.11
|
|
|
CHF 1.01
|
|
|
CHF 0.835
|
|
|
CHF 0.721
|
|
|
CHF 0.704
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
|
|
|
Darlington-Transistoren Eight NPN Array
- ULN2803A
- STMicroelectronics
-
1:
CHF 1.41
-
36 170Auf Lager
|
Mouser-Teilenr.
511-ULN2803A
|
STMicroelectronics
|
Darlington-Transistoren Eight NPN Array
|
|
36 170Auf Lager
|
|
|
CHF 1.41
|
|
|
CHF 0.90
|
|
|
CHF 0.842
|
|
|
CHF 0.835
|
|
Min.: 1
Mult.: 1
|
|
Darlington Transistors
|
|
Through Hole
|
PDIP-18
|
NPN
|
|
|
|
MOSFETs N-Channel 40 V StripFET II Pwr Mos
- STP150NF04
- STMicroelectronics
-
1:
CHF 1.85
-
870Auf Lager
|
Mouser-Teilenr.
511-STP150NF04
|
STMicroelectronics
|
MOSFETs N-Channel 40 V StripFET II Pwr Mos
|
|
870Auf Lager
|
|
|
CHF 1.85
|
|
|
CHF 1.45
|
|
|
CHF 1.18
|
|
|
CHF 0.989
|
|
|
CHF 0.851
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
|
|
|
MOSFET-Module ACEPACK 2 power module, fourpack topology, 650 V, 23 mOhm SiC Power MOSFET NTC
- A2F20M65W3-FC
- STMicroelectronics
-
1:
CHF 62.06
-
18Auf Lager
-
Neues Produkt
|
Mouser-Teilenr.
511-A2F20M65W3-FC
Neues Produkt
|
STMicroelectronics
|
MOSFET-Module ACEPACK 2 power module, fourpack topology, 650 V, 23 mOhm SiC Power MOSFET NTC
|
|
18Auf Lager
|
|
Min.: 1
Mult.: 1
|
|
MOSFET Modules
|
|
Press Fit
|
ACEPACK
|
|
|
|
|
SiC-MOSFETs Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package
- SCT040TO65G3
- STMicroelectronics
-
1:
CHF 7.74
-
37Auf Lager
-
Neues Produkt
|
Mouser-Teilenr.
511-SCT040TO65G3
Neues Produkt
|
STMicroelectronics
|
SiC-MOSFETs Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package
|
|
37Auf Lager
|
|
|
CHF 7.74
|
|
|
CHF 5.85
|
|
|
CHF 4.34
|
|
|
CHF 4.05
|
|
|
CHF 4.05
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
TOLL-8
|
N-Channel
|
|
|
|
MOSFETs N-channel 800 V, 1.0 Ohm typ., 5 A MDmesh K6 Power MOSFET
- STF80N1K1K6
- STMicroelectronics
-
1:
CHF 1.95
-
1 003Auf Lager
-
Neues Produkt
|
Mouser-Teilenr.
511-STF80N1K1K6
Neues Produkt
|
STMicroelectronics
|
MOSFETs N-channel 800 V, 1.0 Ohm typ., 5 A MDmesh K6 Power MOSFET
|
|
1 003Auf Lager
|
|
|
CHF 1.95
|
|
|
CHF 0.951
|
|
|
CHF 0.851
|
|
|
CHF 0.684
|
|
|
CHF 0.627
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220FP-3
|
N-Channel
|
|
|
|
MOSFETs N-channel 800 V, 515 mOhm typ., 7 A MDmesh K6 Power MOSFET
- STF80N600K6
- STMicroelectronics
-
1:
CHF 2.60
-
1 047Auf Lager
-
Neues Produkt
|
Mouser-Teilenr.
511-STF80N600K6
Neues Produkt
|
STMicroelectronics
|
MOSFETs N-channel 800 V, 515 mOhm typ., 7 A MDmesh K6 Power MOSFET
|
|
1 047Auf Lager
|
|
|
CHF 2.60
|
|
|
CHF 1.30
|
|
|
CHF 1.28
|
|
|
CHF 1.07
|
|
|
CHF 0.94
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220FP-3
|
N-Channel
|
|
|
|
IGBTs Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT
- STGHU30M65DF2AG
- STMicroelectronics
-
1:
CHF 3.59
-
540Auf Lager
-
600erwartet ab 29.06.2026
-
Neues Produkt
|
Mouser-Teilenr.
511-STGHU30M65DF2AG
Neues Produkt
|
STMicroelectronics
|
IGBTs Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT
|
|
540Auf Lager
600erwartet ab 29.06.2026
|
|
|
CHF 3.59
|
|
|
CHF 2.38
|
|
|
CHF 1.69
|
|
|
CHF 1.63
|
|
|
CHF 1.45
|
|
Min.: 1
Mult.: 1
|
|
IGBTs
|
Si
|
SMD/SMT
|
HU3PAK-7
|
|
|
|
|
IGBTs Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT
- STGWA30M65DF2AG
- STMicroelectronics
-
1:
CHF 3.39
-
766Auf Lager
-
Neues Produkt
|
Mouser-Teilenr.
511-STGWA30M65DF2AG
Neues Produkt
|
STMicroelectronics
|
IGBTs Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT
|
|
766Auf Lager
|
|
|
CHF 3.39
|
|
|
CHF 2.29
|
|
|
CHF 1.70
|
|
|
CHF 1.51
|
|
|
CHF 1.34
|
|
Min.: 1
Mult.: 1
|
|
IGBTs
|
Si
|
Through Hole
|
TO-247-3
|
|
|
|
|
IGBTs Automotive-grade trench gate field-stop 650 V, 50 A low-loss M series IGBT
- STGWA50M65DF2AG
- STMicroelectronics
-
1:
CHF 4.75
-
54Auf Lager
-
Neues Produkt
|
Mouser-Teilenr.
511-STGWA50M65DF2AG
Neues Produkt
|
STMicroelectronics
|
IGBTs Automotive-grade trench gate field-stop 650 V, 50 A low-loss M series IGBT
|
|
54Auf Lager
|
|
|
CHF 4.75
|
|
|
CHF 3.31
|
|
|
CHF 2.39
|
|
|
CHF 2.21
|
|
Min.: 1
Mult.: 1
|
|
IGBT Transistors
|
|
|
|
|
|
|
|
Bipolartransistoren - BJT Rad-Hard 50 V, 0.8 A NPN transistor - Engineering model
- 2N2222AUB1
- STMicroelectronics
-
1:
CHF 75.00
-
145Auf Lager
|
Mouser-Teilenr.
511-2N2222AUB1
|
STMicroelectronics
|
Bipolartransistoren - BJT Rad-Hard 50 V, 0.8 A NPN transistor - Engineering model
|
|
145Auf Lager
|
|
|
CHF 75.00
|
|
|
CHF 70.44
|
|
|
CHF 63.51
|
|
Min.: 1
Mult.: 1
|
|
BJTs - Bipolar Transistors
|
Si
|
SMD/SMT
|
UB-4
|
NPN
|
|
|
|
Bipolartransistoren - BJT Rad-Hard 60 V, 0.6 A PNP transistor - Engineering model
- 2N2907AUB1
- STMicroelectronics
-
1:
CHF 90.44
-
21Auf Lager
|
Mouser-Teilenr.
511-2N2907AUB1
|
STMicroelectronics
|
Bipolartransistoren - BJT Rad-Hard 60 V, 0.6 A PNP transistor - Engineering model
|
|
21Auf Lager
|
|
Min.: 1
Mult.: 1
|
|
BJTs - Bipolar Transistors
|
Si
|
SMD/SMT
|
UB-4
|
PNP
|
|
|
|
IGBTs Automotive-grade trench gate field-stop 1200 V 40 A low-loss MS series IGBT in a
- GWA40MS120DF4AG
- STMicroelectronics
-
1:
CHF 5.33
-
566Auf Lager
|
Mouser-Teilenr.
511-GWA40MS120DF4AG
|
STMicroelectronics
|
IGBTs Automotive-grade trench gate field-stop 1200 V 40 A low-loss MS series IGBT in a
|
|
566Auf Lager
|
|
|
CHF 5.33
|
|
|
CHF 3.69
|
|
|
CHF 2.68
|
|
|
CHF 2.66
|
|
|
CHF 2.54
|
|
Min.: 1
Mult.: 1
|
|
IGBT Transistors
|
Si
|
Through Hole
|
TO-247-3
|
|
|
|
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
- SCT012H90G3AG
- STMicroelectronics
-
1:
CHF 16.65
-
154Auf Lager
-
1 000erwartet ab 01.03.2027
|
Mouser-Teilenr.
511-SCT012H90G3AG
|
STMicroelectronics
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
|
|
154Auf Lager
1 000erwartet ab 01.03.2027
|
|
|
CHF 16.65
|
|
|
CHF 11.95
|
|
|
CHF 11.61
|
|
|
CHF 10.85
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
|
|
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
- SCT018H65G3AG
- STMicroelectronics
-
1:
CHF 12.54
-
197Auf Lager
|
Mouser-Teilenr.
511-SCT018H65G3AG
|
STMicroelectronics
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
|
|
197Auf Lager
|
|
|
CHF 12.54
|
|
|
CHF 8.85
|
|
|
CHF 8.53
|
|
|
CHF 8.07
|
|
|
CHF 7.54
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
|
|
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
- SCT018W65G3-4AG
- STMicroelectronics
-
1:
CHF 12.65
-
532Auf Lager
|
Mouser-Teilenr.
511-SCT018W65G3-4AG
|
STMicroelectronics
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
|
|
532Auf Lager
|
|
|
CHF 12.65
|
|
|
CHF 9.97
|
|
|
CHF 8.20
|
|
|
CHF 8.00
|
|
|
CHF 7.61
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
- SCT027W65G3-4AG
- STMicroelectronics
-
1:
CHF 10.46
-
338Auf Lager
|
Mouser-Teilenr.
511-SCT027W65G3-4AG
|
STMicroelectronics
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
|
|
338Auf Lager
|
|
|
CHF 10.46
|
|
|
CHF 7.82
|
|
|
CHF 6.75
|
|
|
CHF 5.98
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A
- SCT040W120G3-4AG
- STMicroelectronics
-
1:
CHF 10.65
-
693Auf Lager
|
Mouser-Teilenr.
511-SCT040W120G3-4AG
|
STMicroelectronics
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A
|
|
693Auf Lager
|
|
|
CHF 10.65
|
|
|
CHF 7.44
|
|
|
CHF 6.09
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|