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SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package
- SCT016H120G3AG
- STMicroelectronics
-
1:
18.89 CHF
-
874Auf Lager
-
Neues Produkt
|
Mouser-Teilenr.
511-SCT016H120G3AG
Neues Produkt
|
STMicroelectronics
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package
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874Auf Lager
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18.89 CHF
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13.67 CHF
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13.64 CHF
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13.63 CHF
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12.74 CHF
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Min.: 1
Mult.: 1
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SMD/SMT
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H2PAK-7
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N-Channel
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1 Channel
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1.2 kV
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112 A
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22 mOhms
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- 10 V, + 22 V
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3 V
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150 nC
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- 55 C
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+ 175 C
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652 W
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Enhancement
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AEC-Q101
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SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package
- SCT027H65G3AG
- STMicroelectronics
-
1:
10.27 CHF
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1 082Auf Lager
-
Neues Produkt
|
Mouser-Teilenr.
511-SCT027H65G3AG
Neues Produkt
|
STMicroelectronics
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package
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1 082Auf Lager
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10.27 CHF
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7.20 CHF
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6.25 CHF
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5.84 CHF
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Min.: 1
Mult.: 1
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SMD/SMT
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H2PAK-7
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N-Channel
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1 Channel
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650 V
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60 A
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39.3 mOhms
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- 10 V, + 22 V
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3 V
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48.6 nC
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- 55 C
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+ 175 C
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300 W
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Enhancement
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AEC-Q101
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SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
- SCT025H120G3AG
- STMicroelectronics
-
1:
13.90 CHF
-
9Auf Lager
-
2 000erwartet ab 12.10.2026
-
Neues Produkt
|
Mouser-Teilenr.
511-SCT025H120G3AG
Neues Produkt
|
STMicroelectronics
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
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9Auf Lager
2 000erwartet ab 12.10.2026
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13.90 CHF
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9.86 CHF
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9.21 CHF
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8.59 CHF
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Min.: 1
Mult.: 1
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SMD/SMT
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H2PAK-7
|
N-Channel
|
1 Channel
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1.2 kV
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55 A
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37 mOhms
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- 10 V, + 22 V
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3 V
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73 nC
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- 55 C
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+ 175 C
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375 W
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Enhancement
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AEC-Q101
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SiC-MOSFETs Silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
- SCT025H120G3-7
- STMicroelectronics
-
1:
13.60 CHF
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100Auf Bestellung
-
Neues Produkt
|
Mouser-Teilenr.
511-SCT025H120G3-7
Neues Produkt
|
STMicroelectronics
|
SiC-MOSFETs Silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
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|
100Auf Bestellung
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13.60 CHF
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10.52 CHF
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9.11 CHF
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9.10 CHF
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8.04 CHF
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Min.: 1
Mult.: 1
|
|
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SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
55 A
|
37 mOhms
|
- 10 V, + 22 V
|
3 V
|
73 nC
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- 55 C
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+ 175 C
|
375 W
|
Enhancement
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AEC-Q101
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SiC-MOSFETs Silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package
- SCT070H120G3-7
- STMicroelectronics
-
1 000:
4.69 CHF
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Nicht-auf-Lager-Vorlaufzeit 16 Wochen
-
Neues Produkt
|
Mouser-Teilenr.
511-SCT070H120G3-7
Neues Produkt
|
STMicroelectronics
|
SiC-MOSFETs Silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package
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Nicht-auf-Lager-Vorlaufzeit 16 Wochen
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Min.: 1 000
Mult.: 1 000
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SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
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1.2 kV
|
30 A
|
87 mOhms
|
- 10 V, + 22 V
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3 V
|
37 nC
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- 55 C
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+ 175 C
|
223 W
|
Enhancement
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Schweiz
