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SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package
- SCT012W90G3-4AG
- STMicroelectronics
-
1:
16.81 CHF
-
640Auf Lager
-
Neues Produkt
|
Mouser-Teilenr.
511-SCT012W90G3-4AG
Neues Produkt
|
STMicroelectronics
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package
|
|
640Auf Lager
|
|
|
16.81 CHF
|
|
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14.33 CHF
|
|
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12.40 CHF
|
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Min.: 1
Mult.: 1
|
|
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Through Hole
|
HiP247-3
|
N-Channel
|
1 Channel
|
900 V
|
110 A
|
15.8 mOhms
|
- 10 V, + 22 V
|
3.1 V
|
138 nC
|
- 55 C
|
+ 200 C
|
625 W
|
Enhancement
|
AEC-Q101
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SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
- SCT025W120G3AG
- STMicroelectronics
-
1:
14.62 CHF
-
502Auf Lager
-
Neues Produkt
|
Mouser-Teilenr.
511-SCT025W120G3AG
Neues Produkt
|
STMicroelectronics
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
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|
502Auf Lager
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|
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14.62 CHF
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|
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11.71 CHF
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|
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10.12 CHF
|
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Min.: 1
Mult.: 1
|
|
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Through Hole
|
HiP247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
56 A
|
37 mOhms
|
- 10 V, + 22 V
|
3 V
|
73 nC
|
- 55 C
|
+ 200 C
|
388 W
|
Enhancement
|
AEC-Q101
|
|
|
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SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package
- SCT015W120G3-4AG
- STMicroelectronics
-
1:
19.63 CHF
-
600erwartet ab 26.10.2026
|
Mouser-Teilenr.
511-SCT015W120G3-4AG
|
STMicroelectronics
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package
|
|
600erwartet ab 26.10.2026
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19.63 CHF
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|
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16.06 CHF
|
|
|
14.19 CHF
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
129 A
|
15 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
167 nC
|
- 55 C
|
+ 200 C
|
673 W
|
Enhancement
|
AEC-Q101
|
|
|
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SiC-MOSFETs Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247-4 package
- SCT040W120G3-4
- STMicroelectronics
-
1:
9.22 CHF
-
100Auf Bestellung
-
Neues Produkt
|
Mouser-Teilenr.
511-SCT040W120G3-4
Neues Produkt
|
STMicroelectronics
|
SiC-MOSFETs Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247-4 package
|
|
100Auf Bestellung
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9.22 CHF
|
|
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7.51 CHF
|
|
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6.25 CHF
|
|
|
5.58 CHF
|
|
|
4.74 CHF
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
40 A
|
54 mOhms
|
- 10 V, + 22 V
|
3.1 V
|
56 nC
|
- 55 C
|
+ 200 C
|
312 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A in a HiP247-4 package
- SCT019W120G3-4AG
- STMicroelectronics
-
1:
15.02 CHF
-
Nicht-auf-Lager-Vorlaufzeit 17 Wochen
-
Neues Produkt
|
Mouser-Teilenr.
511-SCT019W120G3-4AG
Neues Produkt
|
STMicroelectronics
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A in a HiP247-4 package
|
|
Nicht-auf-Lager-Vorlaufzeit 17 Wochen
|
|
|
15.02 CHF
|
|
|
12.03 CHF
|
|
|
10.40 CHF
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
90 A
|
26 mOhms
|
- 10 V, + 22 V
|
4.2 V
|
120 nC
|
- 55 C
|
+ 200 C
|
486 W
|
|
|
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|
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SiC-MOSFETs Silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
- SCT025W120G3-4
- STMicroelectronics
-
600:
9.50 CHF
-
Nicht-auf-Lager-Vorlaufzeit 17 Wochen
-
Neues Produkt
|
Mouser-Teilenr.
511-SCT025W120G3-4
Neues Produkt
|
STMicroelectronics
|
SiC-MOSFETs Silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
|
|
Nicht-auf-Lager-Vorlaufzeit 17 Wochen
|
|
Min.: 600
Mult.: 600
|
|
|
Through Hole
|
HiP247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
56 A
|
37 mOhms
|
-10 V, 22 V
|
4.2 V
|
73 nC
|
- 55 C
|
+ 200 C
|
388 W
|
Enhancement
|
|
|
|
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
- SCT070W120G3-4
- STMicroelectronics
-
1:
8.85 CHF
-
Nicht-auf-Lager-Vorlaufzeit 17 Wochen
-
Neues Produkt
|
Mouser-Teilenr.
511-SCT070W120G3-4
Neues Produkt
|
STMicroelectronics
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
|
|
Nicht-auf-Lager-Vorlaufzeit 17 Wochen
|
|
|
8.85 CHF
|
|
|
5.29 CHF
|
|
|
4.50 CHF
|
|
|
4.37 CHF
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP247-4
|
N-Channel
|
|
1.2 kV
|
30 A
|
87 mOhms
|
- 10 V, + 22 V
|
3 V
|
41 nC
|
- 55 C
|
+ 200 C
|
236 W
|
Enhancement
|
|
|
|
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A
- SCT070W120G3AG
- STMicroelectronics
-
1:
9.83 CHF
-
Nicht-auf-Lager-Vorlaufzeit 17 Wochen
-
Neues Produkt
|
Mouser-Teilenr.
511-SCT070W120G3AG
Neues Produkt
|
STMicroelectronics
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A
|
|
Nicht-auf-Lager-Vorlaufzeit 17 Wochen
|
|
|
9.83 CHF
|
|
|
8.01 CHF
|
|
|
6.68 CHF
|
|
|
5.94 CHF
|
|
|
5.06 CHF
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
|
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|
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SiC-MOSFETs Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an HiP247 package
- SCTWA40N120G2V
- STMicroelectronics
-
1:
14.61 CHF
-
Nicht-auf-Lager-Vorlaufzeit 32 Wochen
-
NRND
|
Mouser-Teilenr.
511-SCTWA40N120G2V
NRND
|
STMicroelectronics
|
SiC-MOSFETs Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an HiP247 package
|
|
Nicht-auf-Lager-Vorlaufzeit 32 Wochen
|
|
|
14.61 CHF
|
|
|
11.13 CHF
|
|
|
9.35 CHF
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
36 A
|
100 mOhms
|
- 10 V, + 22 V
|
2.45 V
|
61 nC
|
- 55 C
|
+ 200 C
|
278 W
|
Enhancement
|
|
|
Schweiz
