NBT SRAMs

GSI Technology NBT SRAMs are 144Mbit and 288Mbit Synchronous Static SRAMs that utilize all available bus bandwidth. The SRAMs achieve this by eliminating the need to insert deselect cycles when the device is switched from read to write cycles. The devices' simplified interface is designed to use a data bus's maximum bandwidth. Because it is a synchronous device, address, data inputs, and read/write control inputs are captured on the rising edge of the input clock.

Risultati: 1 613
Seleziona Immagine Codice Produttore Descrizione Scheda dati Disponibilità Prezzi (CHF) Filtra i risultati nella tabella per prezzo unitario in base alla quantità. Qtà RoHS Modello ECAD Dimensioni memoria Organizzazione Tempo di accesso Frequenza di clock massima Tipo di interfaccia Tensione di alimentazione - Max. Tensione di alimentazione - Min. Corrente di alimentazione - Max Temperatura di lavoro minima Temperatura di lavoro massima Stile di montaggio Package/involucro Confezione
GSI Technology SRAM 2.5 or 3.3V 256K x 36 9M 15A magazzino
Min: 1
Mult.: 1

9 Mbit 256 k x 36 6.5 ns 200 MHz Parallel 3.6 V 2.3 V 140 mA, 170 mA 0 C + 70 C SMD/SMT TQFP-100 Tray
GSI Technology SRAM 2.5 or 3.3V 2M x 18 36M 15A magazzino
Min: 1
Mult.: 1

36 Mbit 2 M x 18 6.5 ns 200 MHz Parallel 3.6 V 2.3 V 185 mA, 220 mA 0 C + 70 C SMD/SMT TQFP-100 Tray
GSI Technology SRAM 2.5 or 3.3V 2M x 18 36M 4A magazzino
Min: 1
Mult.: 1

36 Mbit 2 M x 18 6.5 ns 200 MHz Parallel 3.6 V 2.3 V 205 mA, 240 mA - 40 C + 85 C SMD/SMT TQFP-100 Tray
GSI Technology SRAM 2.5 or 3.3V 512K x 36 18M 36A magazzino
Min: 1
Mult.: 1

18 Mbit 512 k x 36 6.5 ns 200 MHz Parallel 3.6 V 2.3 V 230 mA - 40 C + 85 C SMD/SMT BGA-165 Tray
GSI Technology SRAM 2.5 or 3.3V 1M x 36 36M 2A magazzino
Min: 1
Mult.: 1

36 Mbit 1 M x 36 6.5 ns 200 MHz Parallel 3.6 V 2.3 V 225 mA, 260 mA - 40 C + 85 C SMD/SMT BGA-165 Tray
GSI Technology SRAM 2.5 or 3.3V 128K x 36 4M 45A magazzino
Min: 1
Mult.: 1

4 Mbit 128 k x 36 7.5 ns 150 MHz Parallel 3.6 V 2.3 V 130 mA, 140 mA 0 C + 70 C SMD/SMT TQFP-100 Tray
GSI Technology SRAM 2.5 or 3.3V 512K x 18 9M 50A magazzino
Min: 1
Mult.: 1

9 Mbit 512 k x 18 6.5 ns 200 MHz Parallel 3.6 V 2.3 V 130 mA, 155 mA 0 C + 70 C SMD/SMT BGA-119 Tray
GSI Technology SRAM 1.8/2.5V 512K x 36 18M 10A magazzino
Min: 1
Mult.: 1

18 Mbit 512 k x 36 6.5 ns 200 MHz Parallel 2.7 V 1.7 V 225 mA, 230 mA - 40 C + 85 C SMD/SMT BGA-165 Tray
GSI Technology SRAM 2.5 or 3.3V 1M x 36 36M 7A magazzino
Min: 1
Mult.: 1

36 Mbit 1 M x 36 6.5 ns 200 MHz Parallel 3.6 V 2.3 V 205 mA, 240 mA 0 C + 70 C SMD/SMT BGA-165 Tray
GSI Technology SRAM 3A magazzino
Min: 1
Mult.: 1
No
36 Mbit 1 M x 36 6.5 ns 200 MHz Parallel 3.6 V 2.3 V - 40 C + 125 C SMD/SMT BGA-165
GSI Technology SRAM 2.5 or 3.3V 1M x 36 32M 23A magazzino
Min: 1
Mult.: 1
No
36 Mbit 1 M x 36 5.5 ns 250 MHz Parallel 3.6 V 2.3 V 250 mA, 305 mA - 40 C + 85 C SMD/SMT BGA-165 Tray
GSI Technology SRAM 2.5 or 3.3V 1M x 36 32M 14A magazzino
Min: 1
Mult.: 1
No
36 Mbit 1 M x 36 7.5 ns 150 MHz Parallel 3.6 V 2.3 V 210 mA, 220 mA - 40 C + 85 C SMD/SMT BGA-165 Tray
GSI Technology SRAM 2.5 or 3.3V 2M x 18 36M 19A magazzino
Min: 1
Mult.: 1
No
36 Mbit 2 M x 18 5.5 ns 250 MHz Parallel 3.6 V 2.3 V 215 mA, 255 mA 0 C + 85 C SMD/SMT BGA-165 Tray
GSI Technology SRAM 1.8/2.5V 512K x 18 9M 38A magazzino
Min: 1
Mult.: 1

9 Mbit 512 k x 18 6.5 ns 200 MHz Parallel 2.7 V 1.7 V 125 mA, 160 mA - 40 C + 85 C SMD/SMT BGA-165 Tray
GSI Technology SRAM 2.5 or 3.3V 256K x 18 4M 71A magazzino
Min: 1
Mult.: 1

4 Mbit 256 k x 18 5.5 ns 250 MHz Parallel 3.6 V 2.3 V 165 mA, 200 mA - 40 C + 85 C SMD/SMT TQFP-100 Tray
GSI Technology SRAM 1.8/2.5V 2M x 36 72M 7A magazzino
Min: 1
Mult.: 1

72 Mbit 2 M x 36 6.5 ns 250 MHz Parallel 2.7 V 1.7 V 295 mA, 435 mA - 40 C + 85 C SMD/SMT BGA-165 Tray
GSI Technology SRAM 1.8/2.5V 1M x 36 36M 1A magazzino
Min: 1
Mult.: 1

36 Mbit 1 M x 36 6.5 ns 200 MHz Parallel 2.7 V 1.7 V 235 mA, 270 mA - 40 C + 85 C SMD/SMT BGA-165 Tray
GSI Technology SRAM 2.5 or 3.3V 4M x 18 72M 5A magazzino
Min: 1
Mult.: 1
72 Mbit 4 M x 18 6.5 ns 250 MHz Parallel 3.6 V 2.3 V 275 mA, 395 mA - 40 C + 85 C SMD/SMT BGA-165 Tray
GSI Technology SRAM 2.5 or 3.3V 512K x 36 18M Tempo di consegna 7 settimane
Min: 1
Mult.: 1

18 Mbit 512 k x 36 7.5 ns 150 MHz Parallel 3.6 V 2.3 V 200 mA, 210 mA - 40 C + 100 C SMD/SMT TQFP-100 Tray
GSI Technology SRAM 2.5 or 3.3V 512K x 36 18M
4716.09.2026 previsto
Min: 1
Mult.: 1

18 Mbit 512 k x 36 6.5 ns 200 MHz Parallel 3.6 V 2.3 V 230 mA - 40 C + 100 C SMD/SMT TQFP-100 Tray
GSI Technology SRAM 2.5 or 3.3V 2M x 18 36M
401.09.2026 previsto
Min: 1
Mult.: 1
36 Mbit 2 M x 18 6.5 ns 200 MHz Parallel 3.6 V 2.3 V 205 mA, 240 mA - 40 C + 85 C SMD/SMT BGA-165 Tray
GSI Technology SRAM 2.5 or 3.3V 1M x 36 32M
1225.09.2026 previsto
Min: 1
Mult.: 1
36 Mbit 1 M x 36 5.5 ns 250 MHz Parallel 3.6 V 2.3 V 250 mA, 305 mA - 40 C + 85 C SMD/SMT BGA-165 Tray
GSI Technology SRAM 1.8/2.5V 1M x 36 32M
1025.09.2026 previsto
Min: 1
Mult.: 1
36 Mbit 1 M x 36 5.5 ns 250 MHz Parallel 2.7 V 1.7 V 260 mA, 315 mA - 40 C + 85 C SMD/SMT BGA-165 Tray
GSI Technology SRAM 1.8/2.5V 4M x 36 144M Tempo di consegna, se non a magazzino 5 settimane
Min: 1
Mult.: 1

144 Mbit 4 M x 36 6.5 ns 200 MHz Parallel 3.6 V 2.3 V 340 mA, 410 mA - 40 C + 100 C SMD/SMT TQFP-100 Tray
GSI Technology SRAM 2.5/3.3V 16M x 18 288M Tempo di consegna, se non a magazzino 6 settimane
Min: 1
Mult.: 1

288 Mbit 16 M x 18 6.5 ns 200 MHz Parallel 3.6 V 2.3 V 410 mA, 470 mA 0 C + 85 C SMD/SMT BGA-119 Tray