|
|
GaN FETs HV GAN DISCRETES
- IGLT65R025D2AUMA1
- Infineon Technologies
-
1:
9.82 CHF
-
4 262Auf Lager
-
1 800erwartet ab 16.07.2026
-
Neues Produkt
|
Mouser-Teilenr.
726-IGLT65R025D2AUMA
Neues Produkt
|
Infineon Technologies
|
GaN FETs HV GAN DISCRETES
|
|
4 262Auf Lager
1 800erwartet ab 16.07.2026
|
|
|
9.82 CHF
|
|
|
7.03 CHF
|
|
|
5.63 CHF
|
|
|
4.79 CHF
|
|
|
4.79 CHF
|
|
Min.: 1
Mult.: 1
:
1 800
|
|
|
SMD/SMT
|
HEMT
|
1 Channel
|
650 V
|
67 A
|
30 mOhms
|
- 10 V
|
1.6 V
|
16 nC
|
- 55 C
|
+ 150 C
|
219 W
|
Enhancement
|
|
|
|
GaN FETs HV GAN DISCRETES
- IGLR65R140D2XUMA1
- Infineon Technologies
-
1:
3.09 CHF
-
4 514Auf Lager
-
Neues Produkt
|
Mouser-Teilenr.
726-IGLR65R140D2XUMA
Neues Produkt
|
Infineon Technologies
|
GaN FETs HV GAN DISCRETES
|
|
4 514Auf Lager
|
|
|
3.09 CHF
|
|
|
2.03 CHF
|
|
|
1.42 CHF
|
|
|
1.19 CHF
|
|
|
1.16 CHF
|
|
|
0.987 CHF
|
|
Min.: 1
Mult.: 1
:
5 000
|
|
|
SMD/SMT
|
HEMT
|
1 Channel
|
650 V
|
13 A
|
170 mOhms
|
- 10 V
|
1.6 V
|
2.6 nC
|
- 55 C
|
+ 150 C
|
46 W
|
Enhancement
|
|
|
|
GaN FETs HV GAN DISCRETES
- IGLR65R200D2XUMA1
- Infineon Technologies
-
1:
2.09 CHF
-
4 860Auf Lager
-
Neues Produkt
|
Mouser-Teilenr.
726-IGLR65R200D2XUMA
Neues Produkt
|
Infineon Technologies
|
GaN FETs HV GAN DISCRETES
|
|
4 860Auf Lager
|
|
|
2.09 CHF
|
|
|
1.30 CHF
|
|
|
0.931 CHF
|
|
|
0.782 CHF
|
|
|
0.74 CHF
|
|
|
0.648 CHF
|
|
Min.: 1
Mult.: 1
:
5 000
|
|
|
SMD/SMT
|
HEMT
|
1 Channel
|
650 V
|
9.2 A
|
240 mOhms
|
- 10 V
|
1.6 V
|
1.8 nC
|
- 55 C
|
+ 150 C
|
33 W
|
Enhancement
|
|
|
|
GaN FETs HV GAN DISCRETES
- IGLR65R270D2XUMA1
- Infineon Technologies
-
1:
1.97 CHF
-
4 856Auf Lager
-
Neues Produkt
|
Mouser-Teilenr.
726-IGLR65R270D2XUMA
Neues Produkt
|
Infineon Technologies
|
GaN FETs HV GAN DISCRETES
|
|
4 856Auf Lager
|
|
|
1.97 CHF
|
|
|
1.20 CHF
|
|
|
0.848 CHF
|
|
|
0.694 CHF
|
|
|
0.54 CHF
|
|
|
Anzeigen
|
|
|
0.632 CHF
|
|
|
0.622 CHF
|
|
|
0.537 CHF
|
|
Min.: 1
Mult.: 1
:
5 000
|
|
|
SMD/SMT
|
HEMT
|
1 Channel
|
650 V
|
7.2 A
|
330 mOhms
|
- 10 V
|
1.6 V
|
1.4 nC
|
- 55 C
|
+ 150 C
|
28 W
|
Enhancement
|
|
|
|
GaN FETs HV GAN DISCRETES
- IGLT65R045D2ATMA1
- Infineon Technologies
-
1:
6.88 CHF
-
1 338Auf Lager
-
Neues Produkt
|
Mouser-Teilenr.
726-IGLT65R045D2ATMA
Neues Produkt
|
Infineon Technologies
|
GaN FETs HV GAN DISCRETES
|
|
1 338Auf Lager
|
|
|
6.88 CHF
|
|
|
4.41 CHF
|
|
|
3.49 CHF
|
|
|
3.34 CHF
|
|
|
3.28 CHF
|
|
|
2.83 CHF
|
|
Min.: 1
Mult.: 1
:
1 800
|
|
|
SMD/SMT
|
HEMT
|
1 Channel
|
650 V
|
38 A
|
54 mOhms
|
- 10 V
|
1.6 V
|
8.4 nC
|
- 55 C
|
+ 150 C
|
125 W
|
|
|
|
|
GaN FETs HV GAN DISCRETES
- IGLT65R055D2ATMA1
- Infineon Technologies
-
1:
5.18 CHF
-
495Auf Lager
-
1 800erwartet ab 16.07.2026
-
Neues Produkt
|
Mouser-Teilenr.
726-IGLT65R055D2ATMA
Neues Produkt
|
Infineon Technologies
|
GaN FETs HV GAN DISCRETES
|
|
495Auf Lager
1 800erwartet ab 16.07.2026
|
|
|
5.18 CHF
|
|
|
3.48 CHF
|
|
|
2.72 CHF
|
|
|
2.51 CHF
|
|
|
2.50 CHF
|
|
|
2.23 CHF
|
|
Min.: 1
Mult.: 1
:
1 800
|
|
|
SMD/SMT
|
HEMT
|
1 Channel
|
650 V
|
|
66 mOhms
|
- 10 V
|
1.6 V
|
6.6 nC
|
- 55 C
|
+ 150 C
|
104 W
|
Enhancement
|
|
|
|
GaN FETs HV GAN DISCRETES
- IGLT65R110D2ATMA1
- Infineon Technologies
-
1:
3.43 CHF
-
1 621Auf Lager
-
Neues Produkt
|
Mouser-Teilenr.
726-IGLT65R110D2ATMA
Neues Produkt
|
Infineon Technologies
|
GaN FETs HV GAN DISCRETES
|
|
1 621Auf Lager
|
|
|
3.43 CHF
|
|
|
2.21 CHF
|
|
|
1.68 CHF
|
|
|
1.48 CHF
|
|
|
1.43 CHF
|
|
|
1.27 CHF
|
|
Min.: 1
Mult.: 1
:
1 800
|
|
|
SMD/SMT
|
HEMT
|
1 Channel
|
650 V
|
15 A
|
140 mOhms
|
- 10 V
|
1.6 V
|
3.4 nC
|
- 40 C
|
+ 150 C
|
|
Enhancement
|
|
|
|
GaN FETs HV GAN DISCRETES
- IGOT65R025D2AUMA1
- Infineon Technologies
-
1:
10.21 CHF
-
982Auf Lager
-
Neues Produkt
|
Mouser-Teilenr.
726-IGOT65R025D2AUMA
Neues Produkt
|
Infineon Technologies
|
GaN FETs HV GAN DISCRETES
|
|
982Auf Lager
|
|
|
10.21 CHF
|
|
|
7.62 CHF
|
|
|
5.97 CHF
|
|
|
5.85 CHF
|
|
|
4.96 CHF
|
|
Min.: 1
Mult.: 1
:
800
|
|
|
SMD/SMT
|
HEMT
|
1 Channel
|
650 V
|
61 A
|
30 mOhms
|
- 10 V
|
1.6 V
|
16 nC
|
- 55 C
|
+ 150 C
|
181 W
|
Enhancement
|
|
|
|
GaN FETs HV GAN DISCRETES
- IGOT65R035D2AUMA1
- Infineon Technologies
-
1:
8.67 CHF
-
486Auf Lager
-
Neues Produkt
|
Mouser-Teilenr.
726-IGOT65R035D2AUMA
Neues Produkt
|
Infineon Technologies
|
GaN FETs HV GAN DISCRETES
|
|
486Auf Lager
|
|
|
8.67 CHF
|
|
|
6.03 CHF
|
|
|
4.65 CHF
|
|
|
3.95 CHF
|
|
|
3.95 CHF
|
|
Min.: 1
Mult.: 1
:
800
|
|
|
SMD/SMT
|
HEMT
|
1 Channel
|
650 V
|
|
42 mOhms
|
- 10 V
|
1.6 V
|
11 nC
|
- 55 C
|
+ 150 C
|
132 W
|
Enhancement
|
|
|
|
GaN FETs HV GAN DISCRETES
- IGOT65R045D2AUMA1
- Infineon Technologies
-
1:
7.00 CHF
-
1 378Auf Lager
-
Neues Produkt
|
Mouser-Teilenr.
726-IGOT65R045D2AUMA
Neues Produkt
|
Infineon Technologies
|
GaN FETs HV GAN DISCRETES
|
|
1 378Auf Lager
|
|
|
7.00 CHF
|
|
|
4.69 CHF
|
|
|
3.51 CHF
|
|
|
3.42 CHF
|
|
|
3.02 CHF
|
|
|
2.95 CHF
|
|
Min.: 1
Mult.: 1
:
800
|
|
|
SMD/SMT
|
HEMT
|
1 Channel
|
650 V
|
|
54 mOhms
|
- 10 V
|
1.6 V
|
8.4 nC
|
- 55 C
|
+ 150 C
|
104 W
|
Enhancement
|
|
|
|
GaN FETs HV GAN DISCRETES
- IGOT65R055D2AUMA1
- Infineon Technologies
-
1:
5.85 CHF
-
623Auf Lager
-
Neues Produkt
|
Mouser-Teilenr.
726-IGOT65R055D2AUMA
Neues Produkt
|
Infineon Technologies
|
GaN FETs HV GAN DISCRETES
|
|
623Auf Lager
|
|
|
5.85 CHF
|
|
|
3.77 CHF
|
|
|
2.87 CHF
|
|
|
2.31 CHF
|
|
|
2.31 CHF
|
|
Min.: 1
Mult.: 1
:
800
|
|
|
SMD/SMT
|
HEMT
|
1 Channel
|
650 V
|
|
66 mOhms
|
- 10 V
|
1.6 V
|
6.6 nC
|
- 55 C
|
+ 150 C
|
83 W
|
Enhancement
|
|
|
|
GaN FETs HV GAN DISCRETES
- IGLT65R035D2ATMA1
- Infineon Technologies
-
1:
8.42 CHF
-
1 788erwartet ab 02.07.2026
-
Neues Produkt
|
Mouser-Teilenr.
726-IGLT65R035D2ATMA
Neues Produkt
|
Infineon Technologies
|
GaN FETs HV GAN DISCRETES
|
|
1 788erwartet ab 02.07.2026
|
|
|
8.42 CHF
|
|
|
5.84 CHF
|
|
|
4.47 CHF
|
|
|
3.80 CHF
|
|
|
3.80 CHF
|
|
Min.: 1
Mult.: 1
:
1 800
|
|
|
SMD/SMT
|
HEMT
|
1 Channel
|
650 V
|
|
42 mOhms
|
- 10 V
|
1.6 V
|
11 nC
|
- 55 C
|
+ 150 C
|
|
Enhancement
|
|
Schweiz