MRFE6VP61K25H RF Power LDMOS Transistor

NXP's MRFE6VP61K25H Wideband RF Power LDMOS Transistor is a high ruggedness device that is designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace, and radio/land mobile applications. The MRFE6VP61K25H features an unmatched input and output design allowing wide frequency range utilization, between 1.8MHz and 600MHz. This device can be used in either a single-ended or in a push-pull configuration, is suitable for linear application with appropriate biasing, and has integrated ESD protection with greater negative gate-source voltage range for improved Class C operation.

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Menge RoHS ECAD Model Transistorpolung
Technologie
Id - Drain-Gleichstrom
Vds - Drain-Source-Durchschlagspannung
Betriebsfrequenz
Verstärkung
Ausgangsleistung
Maximale Betriebstemperatur
Montageart
Verpackung/Gehäuse
Verpackung
NXP Semiconductors MOSFET HF-Transistoren VHV6 1.25KW ISM NI1230H
Datenblatt
121Auf Lager
MouseReel verfügbar
Min.: 1
Mult.: 1
Rolle: 50

N-Channel Si 30 A 133 V 1.8 MHz to 600 MHz 24 dB 1.25 kW + 150 C Screw Mount NI-1230H-4 Reel, Cut Tape, MouseReel
NXP Semiconductors MOSFET HF-Transistoren VHV6 1.25KW ISM NI1230H
Datenblatt
Nicht-auf-Lager-Vorlaufzeit 10 Wochen
Min.: 150
Mult.: 150
Rolle: 150

N-Channel Si 30 A 133 V 1.8 MHz to 600 MHz 24 dB 1.25 kW + 150 C Screw Mount NI-1230H-4 Reel
NXP Semiconductors MRFE6VP61K25GSR5
NXP Semiconductors MOSFET HF-Transistoren VHV6 1.25KW ISM NI1230GS
Datenblatt
Nicht-auf-Lager-Vorlaufzeit 10 Wochen
MouseReel verfügbar
Min.: 1
Mult.: 1
Rolle: 50

N-Channel Si 30 A 133 V 1.8 MHz to 600 MHz 24 dB 1.25 kW + 150 C Screw Mount NI-1230GS-4 Reel, Cut Tape, MouseReel