Electronic Vehicle (EV) Solutions

ROHM Semiconductor Electronic Vehicle (EV) Solutions are designed to improve efficiency and performance in state-of-the-art EVs. ROHM offers products optimized for various solutions, with a focus on dedicated EV blocks, such as the main inverter, DC-DC converter, onboard charger, and electric compressor.

Alle Ergebnisse (1 401)

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Beschreibung Datenblatt Verfügbarkeit Preis (CHF) Ergebnisse in der Tabelle nach dem Einheitspreis bei Ihrer Menge filtern.
Menge RoHS
ROHM Semiconductor MOSFETs Transistor, MOSFET Nch, 60V(Vdss), 12.0A(Id), (6.0V, 10V Drive)
Datenblatt
2 440Auf Lager
Min.: 1
Mult.: 1
Rolle: 2 500

ROHM Semiconductor MOSFETs HS0P8 100V 60A N CHAN
Datenblatt
4 015Auf Lager
MouseReel verfügbar
Min.: 1
Mult.: 1
Rolle: 2 500

ROHM Semiconductor MOSFETs Transistor, MOSFET Nch, 100V(Vdss), 10.0A(Id), (6.0V, 10V Drive)
Datenblatt
1 297Auf Lager
MouseReel verfügbar
Min.: 1
Mult.: 1
Rolle: 2 500

ROHM Semiconductor MOSFETs Transistor, MOSFET Nch, 100V(Vdss), 70A(Id), (6.0V, 10V Drive)
Datenblatt
1 819Auf Lager
Min.: 1
Mult.: 1

ROHM Semiconductor MOSFETs Transistor, MOSFET Pch, -100V(Vdss), -120A(Id), (4.5V, 6.0V Drive)
Datenblatt
514Auf Lager
Min.: 1
Mult.: 1

ROHM Semiconductor MOSFETs -100V 4.5A, Dual Pch+Pch, SOP8, Power MOSFET
Datenblatt
1 484Auf Lager
Min.: 1
Mult.: 1
Rolle: 2 500

ROHM Semiconductor MOSFETs SOP8 100V 4.5A N-CH MOSFET
Datenblatt
3 071Auf Lager
MouseReel verfügbar
Min.: 1
Mult.: 1
Rolle: 2 500

ROHM Semiconductor MOSFETs 100V 8A Dual Nch+Nch, SOP8, Power MOSFET
Datenblatt
4 733Auf Lager
Min.: 1
Mult.: 1
Rolle: 2 500

ROHM Semiconductor MOSFETs 100V 4.5A Dual Nch+Pch, SOP8, Power MOSFET
Datenblatt
1 718Auf Lager
Min.: 1
Mult.: 1
Rolle: 2 500

ROHM Semiconductor MOSFETs 100V 2.0A Dual Nch+Nch, DFN2020-8D, Power MOSFET
Datenblatt
14 502Auf Lager
Min.: 1
Mult.: 1
Rolle: 3 000

ROHM Semiconductor MOSFETs 100V 2.0A/1.0A, Dual Nch+Pch, DFN2020-8D, Power MOSFET
Datenblatt
17 338Auf Lager
MouseReel verfügbar
Min.: 1
Mult.: 1
Rolle: 3 000

ROHM Semiconductor Schottky Dioden & Gleichrichter Trench MOS Structure, 100V, 10A, TO-277A, Highly Efficient SBD for Automotive: The YQ10RSM10SDTF is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable opera
Datenblatt
7 353Auf Lager
Min.: 1
Mult.: 1
Rolle: 4 000

ROHM Semiconductor Schottky Dioden & Gleichrichter Trench MOS Structure, 100V, 10A, TO-277A, Highly Efficient SBD: The YQ10RSM10SD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high temp
Datenblatt
7 594Auf Lager
Min.: 1
Mult.: 1
Rolle: 4 000

ROHM Semiconductor Schottky Dioden & Gleichrichter Trench MOS Structure, 100V, 12A, TO-277GE, Highly Efficient SBD
Datenblatt
3 980Auf Lager
Min.: 1
Mult.: 1
Rolle: 4 000

ROHM Semiconductor Schottky Dioden & Gleichrichter Trench MOS Structure, 100V, 12A, TO-277GE, Highly Efficient SBD
Datenblatt
3 668Auf Lager
Min.: 1
Mult.: 1
Rolle: 4 000

ROHM Semiconductor Schottky Dioden & Gleichrichter Trench MOS Structure, 100V, 15A, TO-277GE, Highly Efficient SBD
Datenblatt
5 672Auf Lager
Min.: 1
Mult.: 1
Rolle: 4 000

ROHM Semiconductor Schottky Dioden & Gleichrichter Trench MOS Structure, 100V, 15A, TO-277GE, Highly Efficient SBD
Datenblatt
4 095Auf Lager
Min.: 1
Mult.: 1
Rolle: 4 000

ROHM Semiconductor Schottky Dioden & Gleichrichter Trench MOS Structure, 100V, 20A, TO-252, Highly Efficient SBD: The YQ20BGE10SD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high tempe
Datenblatt
4 820Auf Lager
Min.: 1
Mult.: 1
Rolle: 2 500

ROHM Semiconductor Schottky Dioden & Gleichrichter Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD for Automotive: The YQ20NL10CDFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
Datenblatt
1 900Auf Lager
MouseReel verfügbar
Min.: 1
Mult.: 1
Rolle: 1 000

ROHM Semiconductor Schottky Dioden & Gleichrichter Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD: The YQ20NL10CD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high tempe
Datenblatt
1 970Auf Lager
Min.: 1
Mult.: 1
Rolle: 1 000

ROHM Semiconductor Schottky Dioden & Gleichrichter Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD for Automotive: The YQ20NL10SEFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
Datenblatt
2 000Auf Lager
Min.: 1
Mult.: 1
Rolle: 1 000

ROHM Semiconductor Schottky Dioden & Gleichrichter Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD: The YQ20NL10SE is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high tempe
Datenblatt
1 988Auf Lager
Min.: 1
Mult.: 1
Rolle: 1 000

ROHM Semiconductor Schottky Dioden & Gleichrichter Trench MOS Structure, 100V, 30A, TO-263L, Highly Efficient SBD: The YQ30NL10SE is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high tempe
Datenblatt
1 908Auf Lager
Min.: 1
Mult.: 1
Rolle: 1 000

ROHM Semiconductor Schottky Dioden & Gleichrichter Trench MOS Structure, 100V, 3A, TO-277GE, Highly Efficient SBD
Datenblatt
3 852Auf Lager
Min.: 1
Mult.: 1
Rolle: 4 000

ROHM Semiconductor Schottky Dioden & Gleichrichter Trench MOS Structure, 100V, 5A, TO-277GE, Highly Efficient SBD
Datenblatt
3 900Auf Lager
Min.: 1
Mult.: 1
Rolle: 4 000