LET RF Power Transistors

STMicroelectronics LET RF Power Transistors are a common source N-Channel enhancement-mode lateral field-effect RF power transistor. These transistors are based on the new advanced STH5P LDMOS technology and are targeted for operation up to 2.0GHz. STMicroelectronics LET RF Power Transistors are specifically designed for 28V (cellular base stations) and 32/36V (avionics) applications. These devices have a significant improvement in terms of RF performance (+3dB gain, +15% efficiency), ruggedness, and reliability makes this new product line ideal in applications such as private mobile radio, government communications, avionics systems, and L-band satellite uplink equipment.

Ergebnisse: 2
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Menge RoHS ECAD Model Transistorpolung
Technologie
Id - Drain-Gleichstrom
Vds - Drain-Source-Durchschlagspannung
Rds On - Drain-Source-Widerstand
Betriebsfrequenz
Verstärkung
Ausgangsleistung
Maximale Betriebstemperatur
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Verpackung/Gehäuse
Verpackung
STMicroelectronics MOSFET HF-Transistoren 150 W, 28/32 V, HF to 1 GHz RF power LDMOS transistor
Datenblatt
Nicht auf Lager
Min.: 100
Mult.: 100
Rolle: 100

N-Channel Si 2.5 A 28 V 1 Ohms 945 MHz 16 dB 150 W + 200 C Through Hole LBB-4 Reel
STMicroelectronics MOSFET HF-Transistoren RF Power LDMOS transistor HF up to 1.5 GHz
Datenblatt
Nicht-auf-Lager-Vorlaufzeit 28 Wochen
Min.: 1
Mult.: 1

N-Channel Si 9 A 90 V 1.5 GHz + 200 C SMD/SMT M243-3 Bulk