|
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R008M2HXTMA1
- Infineon Technologies
-
1:
CHF 26.00
-
1 054Auf Lager
|
Mouser-Teilenr.
726-IMBG120R008M2HXT
|
Infineon Technologies
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
1 054Auf Lager
|
|
|
CHF 26.00
|
|
|
CHF 22.17
|
|
|
CHF 19.40
|
|
|
CHF 19.40
|
|
Min.: 1
Mult.: 1
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
189 A
|
7.7 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
195 nC
|
- 55 C
|
+ 175 C
|
800 W
|
Enhancement
|
|
|
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R012M2HXTMA1
- Infineon Technologies
-
1:
CHF 18.07
-
1 189Auf Lager
|
Mouser-Teilenr.
726-IMBG120R012M2HXT
|
Infineon Technologies
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
1 189Auf Lager
|
|
|
CHF 18.07
|
|
|
CHF 14.79
|
|
|
CHF 13.06
|
|
|
CHF 13.06
|
|
Min.: 1
Mult.: 1
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
144 A
|
12.2 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
124 nC
|
- 55 C
|
+ 175 C
|
600 W
|
Enhancement
|
|
|
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R017M2HXTMA1
- Infineon Technologies
-
1:
CHF 13.81
-
3 648Auf Lager
|
Mouser-Teilenr.
726-IMBG120R017M2HXT
|
Infineon Technologies
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
3 648Auf Lager
|
|
|
CHF 13.81
|
|
|
CHF 11.06
|
|
|
CHF 9.56
|
|
|
CHF 9.56
|
|
Min.: 1
Mult.: 1
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
107 A
|
17.1 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
89 nC
|
- 55 C
|
+ 175 C
|
470 W
|
Enhancement
|
|
|
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R022M2HXTMA1
- Infineon Technologies
-
1:
CHF 12.05
-
433Auf Lager
|
Mouser-Teilenr.
726-IMBG120R022M2HXT
|
Infineon Technologies
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
433Auf Lager
|
|
|
CHF 12.05
|
|
|
CHF 9.00
|
|
|
CHF 7.78
|
|
|
CHF 7.37
|
|
|
CHF 6.25
|
|
Min.: 1
Mult.: 1
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
87 A
|
21.6 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
71 nC
|
- 55 C
|
+ 175 C
|
385 W
|
Enhancement
|
|
|
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R026M2HXTMA1
- Infineon Technologies
-
1:
CHF 9.96
-
1 900Auf Lager
|
Mouser-Teilenr.
726-IMBG120R026M2HXT
|
Infineon Technologies
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
1 900Auf Lager
|
|
|
CHF 9.96
|
|
|
CHF 8.10
|
|
|
CHF 6.74
|
|
|
CHF 6.02
|
|
|
CHF 5.12
|
|
Min.: 1
Mult.: 1
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
75 A
|
25.4 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
60 nC
|
- 55 C
|
+ 175 C
|
335 W
|
Enhancement
|
|
|
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R040M2HXTMA1
- Infineon Technologies
-
1:
CHF 7.72
-
475Auf Lager
|
Mouser-Teilenr.
726-IMBG120R040M2HXT
|
Infineon Technologies
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
475Auf Lager
|
|
|
CHF 7.72
|
|
|
CHF 5.85
|
|
|
CHF 4.88
|
|
|
CHF 4.34
|
|
|
CHF 3.87
|
|
Min.: 1
Mult.: 1
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
52 A
|
39.6 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
8.1 nC
|
- 55 C
|
+ 175 C
|
250 W
|
Enhancement
|
|
|
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R078M2HXTMA1
- Infineon Technologies
-
1:
CHF 5.72
-
1 651Auf Lager
|
Mouser-Teilenr.
726-IMBG120R078M2HXT
|
Infineon Technologies
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
1 651Auf Lager
|
|
|
CHF 5.72
|
|
|
CHF 4.18
|
|
|
CHF 3.38
|
|
|
CHF 3.00
|
|
|
CHF 2.57
|
|
Min.: 1
Mult.: 1
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
29 A
|
78.1 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
20.6 nC
|
- 55 C
|
+ 175 C
|
158 W
|
Enhancement
|
|
|
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R116M2HXTMA1
- Infineon Technologies
-
1:
CHF 4.92
-
752Auf Lager
|
Mouser-Teilenr.
726-IMBG120R116M2HXT
|
Infineon Technologies
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
752Auf Lager
|
|
|
CHF 4.92
|
|
|
CHF 3.44
|
|
|
CHF 2.78
|
|
|
CHF 2.46
|
|
|
CHF 2.11
|
|
Min.: 1
Mult.: 1
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
21.2 A
|
115.7 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
14.4 nC
|
- 55 C
|
+ 175 C
|
123 W
|
Enhancement
|
|
|
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R181M2HXTMA1
- Infineon Technologies
-
1:
CHF 4.15
-
256Auf Lager
-
1 000erwartet ab 05.03.2026
|
Mouser-Teilenr.
726-IMBG120R181M2HXT
|
Infineon Technologies
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
256Auf Lager
1 000erwartet ab 05.03.2026
|
|
|
CHF 4.15
|
|
|
CHF 2.76
|
|
|
CHF 2.10
|
|
|
CHF 1.92
|
|
|
CHF 1.61
|
|
Min.: 1
Mult.: 1
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
14.9 A
|
181.4 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
9.7 nC
|
- 55 C
|
+ 175 C
|
94 W
|
Enhancement
|
|
|
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R234M2HXTMA1
- Infineon Technologies
-
1:
CHF 3.80
-
259Auf Lager
-
5 000Auf Bestellung
|
Mouser-Teilenr.
726-IMBG120R234M2HXT
|
Infineon Technologies
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
259Auf Lager
5 000Auf Bestellung
Auf Bestellung:
1 000 erwartet ab 05.03.2026
4 000 erwartet ab 19.03.2026
Lieferzeit ab Hersteller:
26 Wochen
|
|
|
CHF 3.80
|
|
|
CHF 2.52
|
|
|
CHF 1.88
|
|
|
CHF 1.71
|
|
|
CHF 1.45
|
|
Min.: 1
Mult.: 1
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
8.1 A
|
233.9 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
7.9 nC
|
- 55 C
|
+ 175 C
|
80 W
|
Enhancement
|
|
|
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R053M2HXTMA1
- Infineon Technologies
-
1:
CHF 6.74
-
9Auf Lager
-
2 000erwartet ab 11.06.2026
|
Mouser-Teilenr.
726-IMBG120R053M2HXT
|
Infineon Technologies
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
9Auf Lager
2 000erwartet ab 11.06.2026
|
|
|
CHF 6.74
|
|
|
CHF 4.72
|
|
|
CHF 3.82
|
|
|
CHF 3.58
|
|
|
CHF 3.11
|
|
Min.: 1
Mult.: 1
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
41 A
|
52.6 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
30 nC
|
- 55 C
|
+ 175 C
|
205 W
|
Enhancement
|
|
Schweiz