|
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R012M2HXTMA1
- Infineon Technologies
-
1:
CHF 19.10
-
887Auf Lager
|
Mouser-Teilenr.
726-IMBG120R012M2HXT
|
Infineon Technologies
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
887Auf Lager
|
|
|
CHF 19.10
|
|
|
CHF 13.95
|
|
|
CHF 13.86
|
|
|
CHF 13.28
|
|
Min.: 1
Mult.: 1
:
1 000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
144 A
|
12.2 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
124 nC
|
- 55 C
|
+ 175 C
|
600 W
|
Enhancement
|
|
|
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R017M2HXTMA1
- Infineon Technologies
-
1:
CHF 14.70
-
3 495Auf Lager
|
Mouser-Teilenr.
726-IMBG120R017M2HXT
|
Infineon Technologies
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
3 495Auf Lager
|
|
|
CHF 14.70
|
|
|
CHF 10.48
|
|
|
CHF 9.90
|
|
|
CHF 9.12
|
|
Min.: 1
Mult.: 1
:
1 000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
107 A
|
17.1 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
89 nC
|
- 55 C
|
+ 175 C
|
470 W
|
Enhancement
|
|
|
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R234M2HXTMA1
- Infineon Technologies
-
1:
CHF 3.98
-
8 123Auf Lager
|
Mouser-Teilenr.
726-IMBG120R234M2HXT
|
Infineon Technologies
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
8 123Auf Lager
|
|
|
CHF 3.98
|
|
|
CHF 2.65
|
|
|
CHF 1.88
|
|
|
CHF 1.78
|
|
|
CHF 1.66
|
|
Min.: 1
Mult.: 1
:
1 000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
8.1 A
|
233.9 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
7.9 nC
|
- 55 C
|
+ 175 C
|
80 W
|
Enhancement
|
|
|
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R008M2HXTMA1
- Infineon Technologies
-
1:
CHF 27.57
-
476Auf Lager
-
2 000erwartet ab 24.09.2026
|
Mouser-Teilenr.
726-IMBG120R008M2HXT
|
Infineon Technologies
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
476Auf Lager
2 000erwartet ab 24.09.2026
|
|
|
CHF 27.57
|
|
|
CHF 21.94
|
|
|
CHF 20.49
|
|
Min.: 1
Mult.: 1
:
1 000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
189 A
|
7.7 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
195 nC
|
- 55 C
|
+ 175 C
|
800 W
|
Enhancement
|
|
|
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R022M2HXTMA1
- Infineon Technologies
-
1:
CHF 12.01
-
423Auf Lager
|
Mouser-Teilenr.
726-IMBG120R022M2HXT
|
Infineon Technologies
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
423Auf Lager
|
|
|
CHF 12.01
|
|
|
CHF 8.31
|
|
|
CHF 7.61
|
|
|
CHF 7.39
|
|
Min.: 1
Mult.: 1
:
1 000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
87 A
|
21.6 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
71 nC
|
- 55 C
|
+ 175 C
|
385 W
|
Enhancement
|
|
|
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R026M2HXTMA1
- Infineon Technologies
-
1:
CHF 10.11
-
1 700Auf Lager
|
Mouser-Teilenr.
726-IMBG120R026M2HXT
|
Infineon Technologies
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
1 700Auf Lager
|
|
|
CHF 10.11
|
|
|
CHF 6.91
|
|
|
CHF 6.16
|
|
|
CHF 6.05
|
|
Min.: 1
Mult.: 1
:
1 000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
75 A
|
25.4 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
60 nC
|
- 55 C
|
+ 175 C
|
335 W
|
Enhancement
|
|
|
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R040M2HXTMA1
- Infineon Technologies
-
1:
CHF 8.02
-
437Auf Lager
|
Mouser-Teilenr.
726-IMBG120R040M2HXT
|
Infineon Technologies
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
437Auf Lager
|
|
|
CHF 8.02
|
|
|
CHF 5.53
|
|
|
CHF 4.51
|
|
|
CHF 4.50
|
|
|
CHF 4.38
|
|
Min.: 1
Mult.: 1
:
1 000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
52 A
|
39.6 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
8.1 nC
|
- 55 C
|
+ 175 C
|
250 W
|
Enhancement
|
|
|
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R078M2HXTMA1
- Infineon Technologies
-
1:
CHF 5.82
-
1 211Auf Lager
|
Mouser-Teilenr.
726-IMBG120R078M2HXT
|
Infineon Technologies
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
1 211Auf Lager
|
|
|
CHF 5.82
|
|
|
CHF 3.94
|
|
|
CHF 2.96
|
|
|
CHF 2.86
|
|
Min.: 1
Mult.: 1
:
1 000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
29 A
|
78.1 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
20.6 nC
|
- 55 C
|
+ 175 C
|
158 W
|
Enhancement
|
|
|
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R116M2HXTMA1
- Infineon Technologies
-
1:
CHF 5.17
-
725Auf Lager
|
Mouser-Teilenr.
726-IMBG120R116M2HXT
|
Infineon Technologies
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
725Auf Lager
|
|
|
CHF 5.17
|
|
|
CHF 3.39
|
|
|
CHF 2.79
|
|
|
CHF 2.75
|
|
|
CHF 2.35
|
|
Min.: 1
Mult.: 1
:
1 000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
21.2 A
|
115.7 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
14.4 nC
|
- 55 C
|
+ 175 C
|
123 W
|
Enhancement
|
|
|
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R181M2HXTMA1
- Infineon Technologies
-
1:
CHF 4.37
-
889Auf Lager
-
1 000Auf Bestellung
|
Mouser-Teilenr.
726-IMBG120R181M2HXT
|
Infineon Technologies
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
889Auf Lager
1 000Auf Bestellung
|
|
|
CHF 4.37
|
|
|
CHF 2.79
|
|
|
CHF 2.08
|
|
|
CHF 2.04
|
|
|
CHF 1.90
|
|
Min.: 1
Mult.: 1
:
1 000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
14.9 A
|
181.4 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
9.7 nC
|
- 55 C
|
+ 175 C
|
94 W
|
Enhancement
|
|
|
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R053M2HXTMA1
- Infineon Technologies
-
1:
CHF 5.99
-
1 973erwartet ab 14.05.2026
|
Mouser-Teilenr.
726-IMBG120R053M2HXT
|
Infineon Technologies
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
1 973erwartet ab 14.05.2026
|
|
|
CHF 5.99
|
|
|
CHF 4.71
|
|
|
CHF 3.69
|
|
|
CHF 3.45
|
|
Min.: 1
Mult.: 1
:
1 000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
41 A
|
52.6 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
30 nC
|
- 55 C
|
+ 175 C
|
205 W
|
Enhancement
|
|
Schweiz